| PART |
Description |
Maker |
| U4275B |
FM-Receiving Condition Analyser and Multipath Noise Cancellation
|
TEMIC[TEMIC Semiconductors]
|
| W53SF4BT |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 15.3 to 15.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Kingbright Corporation.
|
| TMP86F808DNG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 35.7; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86FH47ADUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.8 to 3.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86FH09ANG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86CS25AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.2 to 2.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86C822UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.10 to 3.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| EE-X1088 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.6 to 2.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Omron Electronics LLC
|
| TMP86C407MG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 21.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP86PM23UG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TC7SG32AFS |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
2 Input OR Gate
|
Toshiba Corporation
Toshiba Semiconductor
|
